n-channel 30-v (d-s) mosfet v ds (v) i d (a) 11 9 symbol limit units v ds 30 v gs 20 t a =25c 11 t a =70c 8 i dm 40 i s 4.5 a t a =25c 3.5 t a =70c 2 t j , t stg -55 to 150 c symbol maximum units 35 81 notes a. surface mounted on 1 x 1 fr4 board. b. pulse width limited by maximum junction temperature pulsed drain current b continuous source current (diode conduction) a thermal resistance ratings c/w parameter operating junction and storage temperature range absolute maximum ratings (t a = 25c unless otherwise noted) v parameter drain-source voltage maximum junction-to-ambient a continuous drain current a product summary 30 r ds(on) (m) 22 @ v gs = 10v 30 @ v gs = 4.5v gate-source voltage power dissipation a t <= 10 sec steady state r ja i d a p d w key features: ? low r ds(on) trench technology ? low thermal impedance ? fast switching speed typical applications: ? white led boost converters ? automotive systems ? industrial dc/dc conversion circuits dfn3x3 - 8l 1 freescale aon7410/ MCN7410 www.freescale.net.cn
parameter symbol test conditions min typ max unit gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 ua 1 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 24 v, v gs = 0 v 1 v ds = 24 v, v gs = 0 v, t j = 55c 25 on-state drain current a i d(on) v ds = 5 v, v gs = 10 v 20 a v gs = 10 v, i d = 8.2 a 22 v gs = 4.5 v, i d = 6.6 a 30 forward transconductance a g fs v ds = 15 v, i d = 8.2 a 12 s diode forward voltage a v sd i s = 2.3 a, v gs = 0 v 0.82 v total gate charge q g 4.1 gate-source charge q gs 1.1 gate-drain charge q gd 2.0 turn-on delay time t d(on) 2 rise time t r 4 turn-off delay time t d(off) 16 fall time t f 4 input capacitance c iss 360 output capacitance c oss 55 reverse transfer capacitance c rss 46 notes a. pulse test: pw <= 300us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. dynamic b ns zero gate voltage drain current static ua electrical characteristics i dss m r ds(on) nc v ds = 15 v, r l = 1.9 , i d = 8.2 a, v gen = 10 v, r gen = 6 v ds = 15 v, v gs = 4.5 v, i d = 8.2 a drain-source on-resistance a pf v ds = 15 v, v gs = 0 v, f = 1 mhz 2 freescale is an equal opportunity/affirmative action employer. with such unintended or unauthorized use, even if such claim alleges that freescale was negligent regarding the design or manufacture of the part. buyer shall indemnify and hold freescale and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, where personal injury or death may occur. should buyer purchase or use freescale products for any such unintended or unauthorized application, products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other customer application by customers technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale consequential or incidental damages. typical parameters which may be provided in freescale data sheets and/or specifications can and do vary or guarantee regarding the suitability of its products for any particular purpose, nor does freescale assume any liability arising out freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated in different applications and actual performance may vary over time. all operating parameters, including typicals must be validated for each applications intended to support or sustain life, or for any other application in which the failure of the freescale product could create a situation freescale aon7410/ MCN7410 www.freescale.net.cn
1. on-resistance vs. drain current 2. transfer characteristics 3. on-resistance vs. gate-to-source voltage 4. drain-to-source forward voltage 5. output characteristics 6. capacitance typical electrical characteristics 0 0.02 0.04 0.06 0.08 0.1 0 2 4 6 8 10 rds(on) - on - resistance( ) id - drain current (a) 3.5v 3v 4v,.5v,6v,8v,10v 0 2 4 6 8 10 0 0.1 0.2 0.3 0.4 0.5 0.6 id - drain current (a) vds - drain - to - source voltage (v) 10v,8v,6v, 4.5v,4v 3v 3.5v 0 0.04 0.08 0.12 0.16 0.2 0 2 4 6 8 10 rds(on) - on - resistance( ) vgs - gate - to - source voltage (v) tj = 25 c tj = 25 c 0 5 10 15 20 0 1 2 3 4 5 id - drain current (a) vgs - gate - to - source voltage (v) tj = 25 c 0.01 0.1 1 10 100 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 is - source current (a) vsd - source - to - drain voltage (v) tj = 25 c 0 100 200 300 400 500 600 0 5 10 15 20 capacitance (pf) vds - drain - to - source voltage (v) ciss coss crss f = 1mhz id = 8.2a 3 freescale aon7410/ MCN7410 www.freescale.net.cn
7. gate charge 9. safe operating area 10. single pulse maximum power dissipation 8. normalized on-resistance vs junction temperature 11. normalized thermal transient junction to ambient typical electrical characteristics 0 2 4 6 8 10 0 2 4 6 8 vgs - gate - to - source voltage (v) qg - total gate charge (nc) 0.01 0.1 1 10 100 1000 0.1 1 10 100 1000 id current (a) vds drain to source voltage (v) 10 us 100 us 1 ms 10 ms 100 ms 1 sec 10 sec 100 sec dc idm limit limited by rds 1 0 5 10 15 20 25 30 0.001 0.01 0.1 1 10 100 1000 peak transient power (w) t1 time (sec) 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 time (sec) d = 0.5 0.2 0.1 0.05 0.02 single pulse r ja (t) = r(t) + r ja t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 0.5 1 1.5 2 -50 -25 0 25 50 75 100 125 150 rds(on) - on - resistance( ) (normalized) tj - junctiontemperature( c) p(pk) t 1 t 2 r ja = 81 c / w vds = 15v id = 8.2a 4 freescale aon7410/ MCN7410 www.freescale.net.cn
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